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 Maxim V. Sidorov

Advanced Micro Devices (+ Fujitsu = FASL = Spansion)
One AMD Place
P.O. Box 3453, M/S 32
Sunnyvale, CA 94088 USA


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Qualifications Education Experience References Publications
  • Ph.D. in Science and Engineering of Materials.
  • M.S. in Materials Science and Electrical Engineering.
  • High Resolution, Analytical and Conventional TEM, STEM, EFTEM, EDX, EELS, GIF, Electron Holography, SEM, FIB.
    • Hands-on expertise with a variety of transmission electron microscopes;
    • Hands-on expertise with a variety of TEM sample preparation techniques;
    • Digital image acquisition/processing. Computer image simulation.
  • Solid state technology.
  • Solid State and Semiconductor Physics;
  • Thin film processing;
  • Semiconductor device processing;
  • Failure analysis;
  • Structure and composition characterization;
  • Electrical characterization.
  • Knowledge of computer software/hardware for various platforms.
  • Programming skills (Delphi, Visual Basic, HTML).




Ph.D. in Science and Engineering of Materials (December 1995)

Arizona State University, Science and Engineering of Materials Ph.D. Program.
Thesis: "Structure and Dynamics of Mercury-Intercalated Titanium Disulfide".

M.S. in Materials Science and Engineering (June 1985)
B.Sc. in Electrical Engineering
(June 1982)

Moscow Steel and Alloys Institute, Department of Semiconductor Materials and Devices
Specialization: Semiconductor Materials and Devices.
Thesis: "Growth and Characterization of PbSnTe:Ag Single-crystals and Thin Films".


Professional Experience


2001 - (present) Advanced Micro Devices, Sunnyvale, California

Sr. Engineer, Sr. Member of technical Staff

1998 - 2000 Philips Electron Optics/FEI | Eindhoven, The Netherlands

TEM Applications Specialist

  • TEM, High-resolution and analytical TEM; EFTEM; STEM, EELS, EDX, etc.
  • Materials science
  • Users courses on Basic and Advanced TEM
  • High-end TEM demos
  • Customer support

1995 - 1998 (June) Arizona State University | Tempe, Arizona

Postdoctoral Research Associate

  • Characterization of advanced materials and devices.
    • Silicon-based thin-film nanostructures;
    • Ultrathin films;
    • Silicide thin films and structures;
    • Silicon carbide thin films and structures;
    • Diamond coatings;
    • B-C-N composites;
    • Magnetic materials;
  • Conventional, analytical and high resolution electron microscopy.
  • Failure analysis.
  • Implementation of Hollow-Cone Imaging technique.
  • Computer image simulation and digital image processing/acquisition.
  • TEM sample preparation. Precision methods of sample preparation. Cross-sectioning of individual nano-scale thin-film devices.
1992 - 1995 Arizona State University | Tempe, Arizona

Graduate Research Assistant

  • Characterization and fabrication of novel intercalation materials
    • Conventional and High Resolution Electron Microscopy, including
    • Dinamic and in-situ TEM
    • Low-temperature TEM
    • TEM of air-sensitive and metastable materials
    • New methods for TEM sample preparation
  • Computer image simulation and digital image processing/acquisition

1984 - 1992 Science Academy of the USSR | Moscow, Russia
P.N. Lebedev Physical Institute, Solid State Physics Division.

1988 - 1992 Electron Microscopy Group

Research Scientist

  • Characterization of advanced materials.
    • Microstructure-Property relationships.
    • Structure and composition analysis.
    • Problems of epitaxial growth.
    • Grain boundaries and interfaces.
    • Radiation defects in semiconductors.
  • Analytical TEM/HREM/STEM
    • High Tc superconductor films and ceramics;
    • Semiconductor thin films, superlattices and quantum wells;
    • Metal-Oxide-Semiconductor structures;
    • Yttria and zirconia thin films and ceramics;
1985 - 1988 Technological Group

Junior Research Scientist

  • Fabrication and characterization of epitaxial semiconductor films and devices for optoelectronics
  • MOS structures and devices.
  • Implementation of Photo-stimulated epitaxy technique
  • Automation of technological processes


Selected Publications

1.       Michael A. O’Keefe, Peter C. Tiemeijer and Maxim V. Sidorov, Measurement Of The Electron Beam Energy-Spread Contribution To Information Transfer Limits In HR-TEM, ICEM 2002. Proceedings.

2.       Michael A. O’Keefe, Peter C. Tiemeijer and Maxim Sidorov, Estimation of the Electron Beam Energy Spread for TEM Information Limit, Microscopy And Microanalysis 2002, Quebec City, Canada. Proceedings.

3.       M. Sidorov, ctfExplorer: Interactive Software For 1D And 2D Calculation And Visualization Of TEM Phase Contrast Transfer Function, Microscopy And Microanalysis 2002, Quebec City, Canada. Proceedings.

4.       M. Sidorov, Sample Preparation Optimized For High Performance Analytical (S)TEM, Microscopy And Microanalysis 2002, Quebec City, Canada. Proceedings.

5.       M. Sidorov, High Spatial Resolution Analytical (S)TEM Of Semiconductor Structures Performed On FIB-Prepared Samples, SALSA 2002, Guadaloupe. Proceedings.

6.       M. Sidorov, M. McKelvy, R. Sharma, W.S. Glaunsinger, Mechanism of Host Layer Restacking in Hg-TiS2, J. Solid State Chemistry, 1999;

7.       M. Sidorov, B. Kardynal, D. Smith, In Situ Transmission Electron Microscopy Observations of Silicidation Process for Cobalt Thin Films Deposited on Silicon, Microsc. Microanal. 4 (1998)

8.       A. Kamal, J. Lutzen, B. Sanborn, M. Sidorov, et al. A Two-terminal Nanocrystalline Silicon memory Device at Room Temperature, Semicond. Sci. Technol. 13(1998)

9.       M.J. Rack, D. Vasileska,  D.K. Ferry, and M.V. Sidorov, Surface Roughness of SiO2 from Remote Microwave Plasma Enhanced Chemical Vapor Deposition Process, J. Vac. Sci. Technol. B16(4) 1998.

10.   M.J. Rack, A.D. Gunther, M. Khoury, D. Vasileska, D.K. Ferry, and M.V. Sidorov, Compatibility of cobalt and chromium depletion gates with RPECVD upper gate oxide for silicon based nanostructures, Semicond. Sci. and Tech., submitted Jan. 1998.

11.   M.N. Kozicki, B. Kardynal, S-J. Yang, M.V. Sidorov, D. Smith, Application Of Chemically Enhanced Vapour Etching In The Fabrication On Nanostructures, Semicond. Sci. Technol. 13 (1998).

12.   M. Sidorov, M. McKelvy, Hg-TiS2 Host-Layer Restacking Induced by Elastic Strain During Deintercalation, Chem. Mater., submitted Jan. 1998.

13.   J. Luetzen, A.H.M. Kamal, M.N. Kozicki, D.K. Ferry, M.V. Sidorov, D.J. Smith, Characterization of Ultrathin Silicon Films Formed by Annealing Amorphous Silicon, J. of Applied Phys.

14.   J.H. Edgar, Y. Gao, J. Chaudhuri, M.V. Sidorov,et al, Selective epitaxial Growth of Silicon Carbide on SiO2 masked Si(100), J. of Applied Physics 84(1) (1998).

15.   Y. Gao, J.H. Edgar, J. Chaudhuri, M.V. Sidorov, D.N. Barski, Low-temperature Chemical Vapor Deposition of 3C-SiC Films on Si(100) using SiH4-C2H4-HCl-H2, J. of Crystal Growth 191 (1998).

16.   Z.Y. Xie, J.H. Edgar, T.L.McCormick, M.V. Sidorov, The effects of the Simultaneous Addition of Diborane and Ammonia on the Hot-Filament Assisted Vapor Deposition of Diamond II: Characterization of Diamond and BCN Film, Diamond and Related Materials, 7 (1998).

17.   M. Sidorov, M. McCartney, D. Smith, High Resolution Imaging with Hollow-Cone Illumination,  Proceedings: Microscopy and Microanalysis ’97, Cleveland, Ohio, August 10-14, 1997, Microscopy and Microanalysis, v. 3, suppl. 2, 1191-1192, 1997.

18.   J. Lutzen, A.H.M. Kamal, B.A. Sanborn, M.V. Sidorov, M. Kozicki, D.J. Smith, and D.K. Ferry, Single Electron Memory Effects in Nanocrystalline Silicon at Room Temperature, presented at Silicon Nanostructures Workshop, June 1997, Kyoto, Japan.

19.   M. Sidorov, D. Smith, High Resolution Microscopy of Silicon Based Nanostructures, Mater. Res. Soc. Symp. Proc., Symp. Cb, Fall 1996;

20.   P. Ganal, P. Moreau, G. Ouvrard, M. Sidorov, M. McKelvy, W. Glaunsinger, Structural Investigations Of Mercury-Intercalated Titanium Disulfide: A. The Crystal Structure of Hg1.24TiS2, Chem. Mater., 7(6), 1132-1139, 1995;

21.   M. Sidorov, M. McKelvy, R. Sharma, S. Glaunsinger, P. Ganal, P. Moreau, G. Ouvrard, Structural Investigations Of Mercury-Intercalated Titanium Disulfide: B. HRTEM of HgxTiS2, Chem. Mater., 7(6), 1140-1152, 1995;

22.   M. McKelvy, M. Sidorov, A. Marie, R. Sharma, W.S. Glaunsinger, Dynamic Atomic-Level Investigation of Deintercalation Processes of Mercury Titanium Disulfide Intercalates, Chem. Mater., 6(12), 2233-2245, 1994;

23.   M. McKelvy, M. Sidorov, A. Marie, R. Sharma, W.S. Glaunsinger, In-Situ Dynamic High-Resolution Microscopy Investigation Of Guest-Layer Behavior During Deintercalation Of Mercury Titanium Disulfide, Mater. Res. Soc. Symp. Proc., Symp. U, Fall 1993;

24.   E.V. Pechen, R. Schoenberger, B. Bruner, S. Ritzinger, K.F. Renk, M.V. Sidorov, S.R. Oktyabrsky, Epitaxial Growth of YBa2Cu3O7-x films on Oxidized Silicon with Yttria- and Zirconia- based buffer layers, J. Appl. Phys. 74(5), 3614-3616, 1993;

25.   M.V. Sidorov, S.R. Oktyabrsky, S.I. Krasnosvobodtsev, Microstructure of Barium-Deficient Superconducting Y-Ba-Cu-O Thin Films: Observations Using Transmission Electron Microscopy, Materials Science and Engineering, B18(3), 295-302, 1993;

26.   O.V. Aleksandrov, Yu.I. Gorina, G.A. Kalyuzhnaya, K.V. Kiseleva, A.V. Leonov, I.B. Molchanov, M.V. Sidorov, Single Crystals of the High-Temperature Phase Bi2Sr2Ca2Cu3O10±d, Superconductivity: Physics, Chemistry, Technology, 5(12), 2197-2201, 1992;

27.   M.V. Sidorov, S.R. Oktyabrsky, Microstructural Features of Y-Ba-Cu-O thin Films Grown on Single-Crystal MgO, (extended paper), Materials Science and Engineering, B14(4), 378-385, 1992;

28.   M.V. Sidorov, S.R. Oktyabrsky, Microstructural Features of Y-Ba-Cu-O Thin Films Grown on Single-Crystal MgO, in the Proceedings of Symposium A1 on High Temperature Superconductor Thin Films of the International Conference on Advanced Materials- ICAM91, ed. Correra, L., Amsterdam, Netherlands, 825-830, 1992;

29.   M.V. Sidorov, S.R. Oktyabrsky, M.A. Lomidze, A.E. Gorodetsky, Structural Evolution of the Low Energy Deuterium-Implanted Silicon, Radiation Effects and Defects in Solids, 124(2), 223-232, 1992

30.   M.V. Sidorov, S.R. Oktyabrsky, Growth Mechanism and Typical Grain Boundaries in YBa2Cu3O7‑x thin Films Grown on MgO substrates, Physica Status Solidi A 126(2) 427-435, 1991;

31.   G.A. Kalyuzhnaya, N.N. Sentyurina, V.A. Stepanov, M.V. Sidorov, A Study of Bi-containing High-Tc films produced by the Alkoxy Method, Soviet Physics- Lebedev Institute Publication


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