1.
Michael A. O’Keefe, Peter C. Tiemeijer and Maxim V. Sidorov,
Measurement Of The Electron Beam Energy-Spread Contribution To
Information Transfer Limits In HR-TEM, ICEM 2002. Proceedings.
2.
Michael A. O’Keefe, Peter C. Tiemeijer and Maxim Sidorov,
Estimation of the Electron Beam Energy Spread for TEM Information Limit,
Microscopy And Microanalysis 2002, Quebec City, Canada. Proceedings.
3.
M. Sidorov, ctfExplorer: Interactive Software For 1D And 2D
Calculation And Visualization Of TEM Phase Contrast Transfer Function,
Microscopy And Microanalysis 2002, Quebec City, Canada. Proceedings.
4.
M. Sidorov, Sample Preparation Optimized For High Performance
Analytical (S)TEM, Microscopy And Microanalysis 2002, Quebec City,
Canada. Proceedings.
5.
M. Sidorov, High Spatial Resolution Analytical (S)TEM Of
Semiconductor Structures Performed On FIB-Prepared Samples, SALSA 2002,
Guadaloupe. Proceedings.
6.
M. Sidorov, M. McKelvy, R. Sharma, W.S. Glaunsinger, Mechanism of
Host Layer Restacking in Hg-TiS2, J. Solid State Chemistry,
1999;
7.
M. Sidorov, B. Kardynal, D. Smith, In Situ Transmission Electron
Microscopy Observations of Silicidation Process for Cobalt Thin Films
Deposited on Silicon, Microsc. Microanal. 4 (1998)
8.
A. Kamal, J. Lutzen, B. Sanborn, M. Sidorov, et al. A
Two-terminal Nanocrystalline Silicon memory Device at Room Temperature,
Semicond. Sci. Technol. 13(1998)
9.
M.J. Rack, D. Vasileska, D.K. Ferry, and M.V. Sidorov,
Surface Roughness of SiO2 from Remote Microwave Plasma Enhanced Chemical
Vapor Deposition Process, J. Vac. Sci. Technol. B16(4) 1998.
10.
M.J. Rack, A.D. Gunther, M. Khoury, D. Vasileska, D.K. Ferry, and
M.V. Sidorov, Compatibility of cobalt and chromium depletion gates with
RPECVD upper gate oxide for silicon based nanostructures, Semicond. Sci.
and Tech., submitted Jan. 1998.
11.
M.N. Kozicki, B. Kardynal, S-J. Yang, M.V. Sidorov, D. Smith,
Application Of Chemically Enhanced Vapour Etching In The Fabrication On
Nanostructures, Semicond. Sci. Technol. 13 (1998).
12.
M. Sidorov, M. McKelvy, Hg-TiS2 Host-Layer Restacking
Induced by Elastic Strain During Deintercalation, Chem. Mater.,
submitted Jan. 1998.
13.
J. Luetzen, A.H.M. Kamal, M.N. Kozicki, D.K. Ferry, M.V. Sidorov,
D.J. Smith, Characterization of Ultrathin Silicon Films Formed by
Annealing Amorphous Silicon, J. of Applied Phys.
14.
J.H. Edgar, Y. Gao, J. Chaudhuri, M.V. Sidorov,et al, Selective
epitaxial Growth of Silicon Carbide on SiO2 masked Si(100), J. of
Applied Physics 84(1) (1998).
15.
Y. Gao, J.H. Edgar, J. Chaudhuri, M.V. Sidorov, D.N. Barski,
Low-temperature Chemical Vapor Deposition of 3C-SiC Films on Si(100)
using SiH4-C2H4-HCl-H2, J. of Crystal
Growth 191 (1998).
16.
Z.Y. Xie, J.H. Edgar, T.L.McCormick, M.V. Sidorov, The effects of
the Simultaneous Addition of Diborane and Ammonia on the Hot-Filament
Assisted Vapor Deposition of Diamond II: Characterization of Diamond and
BCN Film, Diamond and Related Materials, 7 (1998).
17.
M. Sidorov, M. McCartney, D. Smith, High Resolution Imaging with
Hollow-Cone Illumination, Proceedings: Microscopy and
Microanalysis ’97, Cleveland, Ohio, August 10-14, 1997, Microscopy and
Microanalysis, v. 3, suppl. 2, 1191-1192, 1997.
18.
J. Lutzen, A.H.M. Kamal, B.A. Sanborn, M.V. Sidorov, M. Kozicki,
D.J. Smith, and D.K. Ferry, Single Electron Memory Effects in
Nanocrystalline Silicon at Room Temperature, presented at Silicon
Nanostructures Workshop, June 1997, Kyoto, Japan.
19.
M. Sidorov, D. Smith, High Resolution Microscopy of Silicon Based
Nanostructures, Mater. Res. Soc. Symp. Proc., Symp. Cb, Fall 1996;
20.
P. Ganal, P. Moreau, G. Ouvrard, M. Sidorov, M. McKelvy, W.
Glaunsinger, Structural Investigations Of Mercury-Intercalated Titanium
Disulfide: A. The Crystal Structure of Hg1.24TiS2,
Chem. Mater., 7(6), 1132-1139, 1995;
21.
M. Sidorov, M. McKelvy, R. Sharma, S. Glaunsinger, P. Ganal, P.
Moreau, G. Ouvrard, Structural Investigations Of Mercury-Intercalated
Titanium Disulfide: B. HRTEM of HgxTiS2, Chem.
Mater., 7(6), 1140-1152, 1995;
22.
M. McKelvy, M. Sidorov, A. Marie, R. Sharma, W.S. Glaunsinger,
Dynamic Atomic-Level Investigation of Deintercalation Processes of
Mercury Titanium Disulfide Intercalates, Chem. Mater., 6(12), 2233-2245,
1994;
23.
M. McKelvy, M. Sidorov, A. Marie, R. Sharma, W.S. Glaunsinger,
In-Situ Dynamic High-Resolution Microscopy Investigation Of Guest-Layer
Behavior During Deintercalation Of Mercury Titanium Disulfide, Mater.
Res. Soc. Symp. Proc., Symp. U, Fall 1993;
24.
E.V. Pechen, R. Schoenberger, B. Bruner, S. Ritzinger, K.F. Renk,
M.V. Sidorov, S.R. Oktyabrsky, Epitaxial Growth of YBa2Cu3O7-x
films on Oxidized Silicon with Yttria- and Zirconia- based buffer
layers, J. Appl. Phys. 74(5), 3614-3616, 1993;
25.
M.V. Sidorov, S.R. Oktyabrsky, S.I. Krasnosvobodtsev,
Microstructure of Barium-Deficient Superconducting Y-Ba-Cu-O Thin Films:
Observations Using Transmission Electron Microscopy, Materials Science
and Engineering, B18(3), 295-302, 1993;
26.
O.V. Aleksandrov, Yu.I. Gorina, G.A. Kalyuzhnaya, K.V. Kiseleva,
A.V. Leonov, I.B. Molchanov, M.V. Sidorov, Single Crystals of the
High-Temperature Phase Bi2Sr2Ca2Cu3O10±d,
Superconductivity: Physics, Chemistry, Technology, 5(12), 2197-2201,
1992;
27.
M.V. Sidorov, S.R. Oktyabrsky, Microstructural Features of
Y-Ba-Cu-O thin Films Grown on Single-Crystal MgO, (extended paper),
Materials Science and Engineering, B14(4), 378-385, 1992;
28.
M.V. Sidorov, S.R. Oktyabrsky, Microstructural Features of
Y-Ba-Cu-O Thin Films Grown on Single-Crystal MgO, in the Proceedings of
Symposium A1 on High Temperature Superconductor Thin Films of the
International Conference on Advanced Materials- ICAM91, ed. Correra, L.,
Amsterdam, Netherlands, 825-830, 1992;
29.
M.V. Sidorov, S.R. Oktyabrsky, M.A. Lomidze, A.E. Gorodetsky,
Structural Evolution of the Low Energy Deuterium-Implanted Silicon,
Radiation Effects and Defects in Solids, 124(2), 223-232, 1992
30.
M.V. Sidorov, S.R. Oktyabrsky, Growth Mechanism and Typical Grain
Boundaries in YBa2Cu3O7‑x thin Films
Grown on MgO substrates, Physica Status Solidi A 126(2) 427-435, 1991;
31.
G.A. Kalyuzhnaya, N.N. Sentyurina, V.A. Stepanov, M.V. Sidorov, A
Study of Bi-containing High-Tc films produced by the Alkoxy Method,
Soviet Physics- Lebedev Institute Publication
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